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| New Product Si5476DU Vishay Siliconix N-Channel 60-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 60 RDS(on) () 0.034 at VGS = 10 V 0.041 at VGS = 4.5 V ID (A)a 12 12 Qg (Typ.) 10.5 nC FEATURES * Halogen-free * TrenchFET(R) Power MOSFET * New Thermally Enhanced PowerPAK(R) ChipFET(R) Package - Small Footprint Area - Low On-Resistance - Thin 0.8 mm Profile RoHS COMPLIANT PowerPAK ChipFET Single 1 2 D D D D D D G S S Marking Code 3 4 AA XXX Lot Traceability and Date Code Part # Code APPLICATIONS * Load Switch for Portable Applications * DC-DC Switch for Low Power Synchronous Rectification * Intermediate Switch Driver G for DC/DC Applications D 8 7 6 5 Bottom View Ordering Information: SI5476DU-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 C Continuous Drain Current (TJ = 150 C) TC = 70 C TA = 25 C TA = 70 C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single Pulse Avalanche Energy TC = 25 C TA = 25 C L = 0.1 mH TC = 25 C Maximum Power Dissipation TC = 70 C TA = 25 C TA = 70 C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 60 20 12a 12a 7b, c 5.6b, c 25 12a 2.6b, c 15 11.2 31 20 3.1b, c 2b, c - 55 to 150 260 W mJ A Unit V C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, f Maximum Junction-to-Case (Drain) t5s Steady State Symbol RthJA RthJC Typical 34 3 Maximum 40 4 Unit C/W Notes: a. Package limited. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. See Solder Profile (http://www.vishay.com/ppg?73257). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 90 C/W. Document Number: 73663 S-81448-Rev. B, 23-Jun-08 www.vishay.com 1 New Product Si5476DU Vishay Siliconix SPECIFICATIONS TJ = 25 C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current On-State Drain Currenta Drain-Source On-State Resistancea Forward Transconductancea Dynamic b Symbol VDS VDS/TJ VGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf td(on) tr td(off) tf IS ISM VSD trr Qrr ta tb Test Conditions VGS = 0 V, ID = 1 mA ID = 250 A VDS = VGS, ID = 250 A VDS = 0 V, VGS = 20 V VDS = 60 V, VGS = 0 V VDS = 60 V, VGS = 0 V, TJ = 55 C VDS 5 V, VGS = 10 V VGS = 10 V, ID = 4.6 A VGS = 4.5 V, ID = 4.2 A VDS = 15 V, ID = 4.6 A Min. 60 Typ. Max. Unit V 55 - 6.3 1 3 100 1 10 25 0.028 0.033 20 0.034 0.041 mV/C V nA A A S Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulse Diode Forward Current Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Reverse Recovery Fall Time Reverse Recovery Rise Time 1100 VDS = 30 V, VGS = 0 V, f = 1 MHz VDS = 30 V, VGS = 10 V, ID = 4.6 A VDS = 30 V, VGS = 4.5 V, ID = 4.6 A f = 1 MHz VDD = 30 V, RL = 5.4 ID 5.6 A, VGEN = 4.5 V, Rg = 1 90 55 21 10.5 3.5 4.2 3.3 20 150 20 60 10 VDD = 30 V, RL = 5.4 ID 5.6 A, VGEN = 10 V, Rg = 1 15 22 10 TC = 25 C IS = 5.5 A, VGS = 0 V 0.85 25 IF = 5.5 A, dI/dt = 100 A/s, TJ = 25 C 25 19 6 30 225 30 90 15 25 40 15 12 25 1.2 50 50 ns 32 16 nC pF A V ns nC ns Notes: a. Pulse test; pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com 2 Document Number: 73663 S-81448-Rev. B, 23-Jun-08 New Product Si5476DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 25 VGS = 10 thru 4 V ID - Drain Current (A) 5 20 ID - Drain Current (A) 4 TC = - 55 C 15 3 10 2 TC = 125 C 5 VGS = 3 V 1 TC = 25 C 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Output Characteristics 0.040 1500 Transfer Characteristics R DS(on) - On-Resistance (m) 1200 C - Capacitance (pF) 0.036 VGS = 4.5 V Ciss 900 0.032 VGS = 10 V 600 0.028 300 Coss 0.024 0 5 10 15 20 25 0 0 Crss 10 20 30 40 50 60 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current and Gate Voltage 10 ID = 4.6 A V GS - Gate-to-Source Voltage (V) 8 R DS(on) - On-Resistance (Normalized) 1.6 1.4 1.2 1.0 0.8 0 0 5 10 15 20 25 0.6 - 50 2.0 1.8 VGS = 10 V ID = 4.6 A Capacitance 6 VDS = 30 V VDS = 48 V 4 2 - 25 0 25 50 75 100 125 150 Qg - Total Gate Charge (nC) TJ - Junction Temperature (C) Gate Charge Document Number: 73663 S-81448-Rev. B, 23-Jun-08 On-Resistance vs. Junction Temperature www.vishay.com 3 New Product Si5476DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 30 0.08 ID = 4.6 A On-Resistance () 10 RDS(on) - Drain-to-Source TJ = 150 C I S - Source Current (A) 0.07 0.06 TA = 125 C 0.05 0.04 TJ = 25 C 0.03 TA = 25 C 1 0.0 0.02 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage 2.6 2.4 2.2 2.0 1.8 1.6 1.4 10 1.2 1.0 - 50 0 0.001 ID = 250 A Power (W) 40 50 On-Resistance vs. Gate-to-Source Voltage VGS(th) (V) 30 20 - 25 0 25 50 75 100 125 150 0.01 0.1 1 Time (s) 10 100 1000 TJ - Temperature (C) Threshold Voltage 100 Limited by R DS(on)* 10 ID - Drain Current (A) Single Pulse Power, Junction-to-Ambient BVDSS Limited 100 s 1 ms 1 10 ms 100 ms 0.1 TA = 25 C Single Pulse 1s 10 s DC 0.01 0.1 * VGS 1 1 00 10 VDS - Drain-to-Source Voltage (V) minimum VGS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient www.vishay.com 4 Document Number: 73663 S-81448-Rev. B, 23-Jun-08 New Product Si5476DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 24 35 30 Power Dissipation (W) 25 20 15 10 5 0 0 25 50 75 100 125 150 25 50 75 100 125 150 20 ID - Drain Current (A) 16 Package Limited 12 8 4 0 TC - Case Temperature (C) TC - Case Temperature (C) Current Derating* Power Derating * The power dissipation PD is based on TJ(max) = 150 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 73663 S-81448-Rev. B, 23-Jun-08 www.vishay.com 5 New Product Si5476DU Vishay Siliconix TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.1 0.05 PDM t1 Notes: 0.02 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 75 C/W 3. TJM - T A = PDMZthJA(t) Single Pulse 0.01 10-4 10-3 10-2 10-1 1 Square Wave Pulse Duration (s) 10 4. Surface Mounted 100 1000 Normalized Thermal Transient Impedance, Junction-to-Ambient 1 Duty Cycle = 0.5 Normalized Effective Transient Thermal Impedance 0.2 0.1 0.05 0.02 0.1 10-4 Single Pulse 10-3 10-2 Square Wave Pulse Duration (s) 10-1 1 Normalized Thermal Transient Impedance, Junction-to-Case Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?73663. www.vishay.com 6 Document Number: 73663 S-81448-Rev. B, 23-Jun-08 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1 |
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